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| SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117. H L C TIP112 EPITAXIAL PLANAR NPN TRANSISTOR A R S E F D P Q T C MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse DC Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 100 100 5 2 4 50 2 50 150 UNIT V V V A K 1 J M M 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-220AB mA W EQUIVALENT CIRCUIT C -65 150 B O 2 3 DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 _ 3.60 + 0.20 3.00 6.70 MAX _ 13.60 + 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 _ 9.50 + 0.20 _ 8.00 + 0.20 2.90 MAX N G B R1 = 10k R2 = 0.6k E ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance ) SYMBOL ICEO ICBO IEBO hFE VCEO(SUS) VCE(sat) VBE(ON) Cob TEST CONDITION VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=4V, IC=1A VCE=4V, IC=2A IC=30mA, IB=0 IC=2A, IB=8mA VCE=4V, IC=2A VCB=10V, IE=0, f=0.1MHz MIN. 1000 500 100 TYP. MAX. 2 1 2 2.5 2.8 100 V V V pF UNIT mA mA 1999. 11. 16 Revision No : 1 1/2 TIP112 I 2.0 COLLECTOR CURRENT I C (A) 1.6 1.2 0.8 0.4 I B =150A C - V CE 100K DC CURRENT GAIN h FE 30K 10K 300 100 30 10 0.01 h FE - I C VCE =4V A 0A 400A A 0 45 A 350 300 50 250A 200A 0 1 2 3 4 5 0.1 1 10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) V BE(sat) , V CE(sat) - I C 100 SATURATION VOLTAGE VBE(sat) ,V CE(sat) (V) 30 10 3 1 0.3 0.1 0.01 V BE(sat) VCE(sat) I C /I B =500 C ob - V CB 1k 500 300 100 50 30 10 5 3 1 0.01 f=0.1MHz CAPACITANCE C ob (pF) 0.1 1 10 0.1 1 10 100 COLLECTOR CURRENT I C (A) COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA P D - Ta 80 70 60 50 40 30 20 10 0 0 50 100 150 200 0.1 1 CASE TEMPERATURE Ta ( C) COLLECTOR CURRENT I C (A) POWER DISSIPATION P D (W) 5 3 DC OPERATION Tc=25 C I C MAX(PULSED) 10 s 1m 5m s 1 0.5 0.3 SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 1999. 11. 16 Revision No : 1 2/2 |
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